• Collegio di Ingegneria Elettronica, delle Telecomunicazioni e Fisica. Componente

• Istituto Fundamental Physics and Materials for Nanotechnology

• Laboratorio CHILAB - Materiali e Microsistemi - Chivasso

Progetti finanziati da contratti commerciali

• Studio di una ottimalenadesione del materiale metallico a quello polimerico , (2018-2019) - Responsabile Scientifico
  Ricerca Commerciale

• Porro, Samuele; Rafal R., Ciechonski; Mikael, Syväjärvi; Rositza, Yakimova (2005)
  Electrical analysis and interface states evaluation of Ni Schottky diodes on 4H-SiC thick epilayers. In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH, vol. 202, pp. 2508-2514. ISSN 0031-8965
  Contributo su Rivista
• Pirri, Candido; Porro, Samuele; Ferrero, Sergio; Celasco, Edvige; Guastella, SALVATORE ... (2005)
  Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications. In: CRYSTAL RESEARCH AND TECHNOLOGY, vol. 40, pp. 964-966. ISSN 0232-1300
  Contributo su Rivista
• Furno, Mauro Stefano; Bonani, Fabrizio; Ghione, Giovanni; Ferrero, Sergio; Porro, ... (2005)
  Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes. In: 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 31 August - 4 September 2004, pp. 941-944. ISSN 0255-5476
  Contributo in Atti di Convegno (Proceeding)
• Ferrero, Sergio; A., Albonico; U. M., Meotto; G., Rombol; Porro, Samuele; Giorgis, ... (2005)
  Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C – Face n – Type 4H – SiC.. In: MATERIALS SCIENCE FORUM, vol. 483-485. ISSN 0255-5476
  Contributo su Rivista
• Pirri, Candido; Porro, Samuele; Ferrero, Sergio; Celasco, Edvige; Guastella, SALVATORE ... (2005)
  Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications. In: CRYSTAL RESEARCH AND TECHNOLOGY, vol. 40, pp. 964-966. ISSN 0232-1300
  Contributo su Rivista
• P., Colombi; E., Bontempi; U. M., Meotto; Porro, Samuele; Ricciardi, Carlo; Scaltrito, ... (2004)
  Structural characterisation of nickel silicide performed by two-dimensional X-ray microdiffraction. In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 114, pp. 236-240. ISSN 0921-5107
  Contributo su Rivista
• Scaltrito, Luciano; Celasco, Edvige; Porro, Samuele; Ferrero, Sergio; Giorgis, Fabrizio; ... (2004)
  Defect influence on the electrical properties of 4H-SiC Schottky diodes. In: MATERIALS SCIENCE FORUM, vol. 457-460, pp. 1081-1084. ISSN 0255-5476
  Contributo su Rivista
• Mandracci, Pietro; Ferrero, Sergio; Porro, Samuele; Ricciardi, Carlo; G., Richieri; ... (2004)
  Plasma-assisted SiC oxidation for power device fabrication. In: APPLIED SURFACE SCIENCE, vol. 238, pp. 336-340. ISSN 0169-4332
  Contributo su Rivista
• Colombi, P; Bontempi, E; Meotto, U. M.; Porro, Samuele; Ricciardi, Carlo; Scaltrito, ... (2004)
  Structural characterisation of nickel suicide performed by two-dimensional X-ray microdiffraction. In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 114-115, pp. 236-240. ISSN 0921-5107
  Contributo su Rivista
• Scaltrito, Luciano; Porro, Samuele; Giorgis, Fabrizio; Mandracci, Pietro; Cocuzza, ... (2003)
  Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes. In: MATERIALS SCIENCE FORUM, vol. 433-436, pp. 455-458. ISSN 0255-5476
  Contributo su Rivista
• Scaltrito, Luciano; Porro, Samuele; Cocuzza, Matteo; Giorgis, Fabrizio; Pirri, Candido; ... (2003)
  Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications. In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 102, pp. 298-303. ISSN 0921-5107
  Contributo su Rivista
• Scaltrito, Luciano; Fanchini, Giovanni; Porro, Samuele; Cocuzza, Matteo; Giorgis, ... (2003)
  Surface analysis and defect characterization of 4H–SiC wafers for power electronic device applications. In: DIAMOND AND RELATED MATERIALS, vol. 12, pp. 1224-1226. ISSN 0925-9635
  Contributo su Rivista
• Scaltrito, Luciano; Porro, Samuele; Ferrero, Sergio; Giorgis, Fabrizio; Pirri, Candido; ... (2003)
  Structural and electrical characterization of epitaxial 4H-SiC layers for power electronic device applications. In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 102, pp. 298-303. ISSN 0921-5107
  Contributo su Rivista
• Scaltrito, Luciano; Fanchini, G.; Porro, Samuele; Cocuzza, Matteo; Giorgis, Fabrizio; ... (2003)
  Surface analysis and defect characterization of 4H-SiC wafers for power electronic device applications. In: DIAMOND AND RELATED MATERIALS, vol. 12, pp. 1224-1226. ISSN 0925-9635
  Contributo su Rivista
• Scaltrito, Luciano; Celasco, Edvige; Porro, Samuele; Ferrero, Sergio; Giorgis, F; Pirri, ... (2003)
  Defect influence on the electrical properties of 4H-SiC Schottky diodes. In: International Conference on Silicon Carbide and Related Materials ICSCRM, Lyon, 5-10 October 2003
  Contributo in Atti di Convegno (Proceeding)
• Scaltrito, Luciano; Porro, Samuele; Giorgis, Fabrizio; Pirri, Candido; Mandracci, ... (2002)
  Defect characterization of 4H-SiC wafers for power electronic device applications. In: JOURNAL OF PHYSICS. CONDENSED MATTER, vol. 14, pp. 13397-13402. ISSN 0953-8984
  Contributo su Rivista

• IMPROVED SUPERCAPACITOR CURRENT COLLECTOR AND RELATIVE PREPARATION METHOD, AND A SUPERCAPACITOR CELL COMPRISING SAID IMPROVED SUPERCAPACITOR CURRENT COLLECTOR. Brevetto nazionale
  Inventori: Andrea Lamberti Samuele Porro Pietro Zaccagnini