Advanced modeling of nanoscale devices for analog applications

Master of Science

• Challenge@PoliTo by Firms - Enel Grids. A.A. 2022/23, INGEGNERIA GESTIONALE (ENGINEERING AND MANAGEMENT). Collaboratore del corso

Bachelor of Science

• Sistemi elettronici, tecnologie e misure. A.A. 2021/22, INGEGNERIA INFORMATICA. Collaboratore del corso
• Dispositivi elettronici. A.A. 2021/22, INGEGNERIA FISICA. Collaboratore del corso
• Dispositivi elettronici. A.A. 2022/23, INGEGNERIA FISICA. Collaboratore del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2022/23, INGEGNERIA INFORMATICA. Collaboratore del corso

• Kouhalvandi, Lida; Catoggio, Eva; DONATI GUERRIERI, Simona (2023)
  Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling. In: IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, Torino, Italy, 6-8 July 2023, pp. 542-546. ISBN: 978-1-6654-6397-3
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, Eva; Guerrieri, Simona Donati; Bonani, Fabrizio (2023)
  TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions. In: 2023 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), Aveiro, Portugal, 8-11 November 2023, pp. 1-4. ISBN: 979-8-3503-2242-2
  Contributo in Atti di Convegno (Proceeding)
• Donati Guerrieri, Simona; Catoggio, Eva; Bonani, Fabrizio (2023)
  Analysis of Doherty Power Amplifier Matching Assisted by Physics-Based Device Modelling. In: ELECTRONICS, vol. 12. ISSN 2079-9292
  Contributo su Rivista
• Guerrieri, Simona Donati; Catoggio, Eva; Bonani, Fabrizio (2023)
  TCAD assisted design of the Doherty Power Amplifier. In: SOLID-STATE ELECTRONICS, vol. 207. ISSN 0038-1101
  Contributo su Rivista
• Catoggio, Eva; Donati Guerrieri, Simona; Bonani, Fabrizio (2023)
  TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions. In: ELECTRONICS, vol. 12. ISSN 2079-9292
  Contributo su Rivista
• Catoggio, E.; Donati Guerrieri, S.; Bonani, F. (2023)
  TCAD analysis of GaN HEMT AC parameters through accurate solution of trap rate equations. In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC), Berlin, Germany, 18-19 September 2023, pp. 33-36. ISBN: 978-2-87487-073-6
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, E.; Donati Guerrieri, S.; Bonani, F.; Ghione, G. (2023)
  Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations. In: IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, Torino, Italy, 6-8 July 2023, pp. 552-557. ISBN: 978-1-6654-6397-3
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, Eva; Donati Guerrieri, Simona; Ramella, Chiara; Bonani, Fabrizio (2023)
  Multi-bias Thermal X-Parameter Model for Efficient Physics-Based FinFET Simulation in RF CAD Tools. In: 53rd Annual Meeting of the Italian Electronics Society (SIE), Pizzo Calabro, Italy, 5-7 September 2022, pp. 43-49. ISSN 1876-1100. ISBN: 978-3-031-26065-0
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, Eva; Guerrieri, Simona Donati; Bonani, Fabrizio (2023)
  GaN HEMT trap-induced variability through concurrent noise and AC TCAD modelling. In: 2023 International Conference on Noise and Fluctuations (ICNF), Grenoble (France), 17-20 October 2023, pp. 1-4. ISBN: 979-8-3503-3011-3
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, Eva (2023)
  Advanced modeling of nanoscale devices for analog applications. relatore: DONATI GUERRIERI, SIMONA; BONANI, FABRIZIO; , 35. XXXV Ciclo, P.: 174
  Doctoral Thesis
• Donati Guerrieri, Simona; Ramella, Chiara; Catoggio, Eva; Bonani, Fabrizio (2022)
  Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design. In: ELECTRONICS, vol. 11. ISSN 2079-9292
  Contributo su Rivista
• Catoggio, E.; Guerrieri, S. Donati; Ramella, C.; Bonani, F. (2022)
  Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations. In: 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Cardiff (UK), 7-8 April 2022, pp. 1-3. ISBN: 978-1-6654-7845-8
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, E.; Donati Guerrieri, S.; Bonani, F.; Ghione, G. (2022)
  Efficient TCAD Temperature-dependent Large-Signal Simulation of a FinFET Power Amplifier. In: 2021 16th European Microwave Integrated Circuits Conference (EuMIC), London, UK, 3-4 April 2022, pp. 189-192. ISBN: 978-2-87487-064-4
  Contributo in Atti di Convegno (Proceeding)
• Donati Guerrieri, Simona; Ramella, Chiara; Catoggio, Eva; Bonani, Fabrizio (2022)
  Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches. In: ELECTRONICS, vol. 11. ISSN 2079-9292
  Contributo su Rivista
• Donati Guerrieri, S.; Ramella, C.; Catoggio, E.; Bonani, F. (2022)
  TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis. In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC), Milano (Italy), 26-27 September 2022, pp. 13-16. ISBN: 978-2-87487-070-5
  Contributo in Atti di Convegno (Proceeding)
• Donati Guerrieri, S.; Catoggio, E.; Bonani, F. (2022)
  TCAD simulation of microwave circuits: The Doherty amplifier. In: SOLID-STATE ELECTRONICS, vol. 197. ISSN 0038-1101
  Contributo su Rivista
• Donati Guerrieri, S.; Ramella, C.; Catoggio, E.; Bonani, F. (2022)
  Variability-aware MMIC design through multiphysics modelling. In: 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), Limoges (France), 6-8 July 2022, pp. 1-4. ISBN: 978-1-6654-8633-0
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, E.; Guerrieri, S. Donati; Bonani, F.; Ghione, G. (2021)
  Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier. In: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD}, Dallas, TX, USA, 27-29 September 2021, pp. 36-39. ISBN: 978-1-6654-0685-7
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, Eva; Guerrieri, Simona Donati; Bonani, Fabrizio (2021)
  Efficient TCAD Thermal Analysis of Semiconductor Devices. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 68, pp. 5462-5468. ISSN 0018-9383
  Contributo su Rivista