De Ruvo, Edoardo; Donati Guerrieri, Simona; Bonani, Fabrizio (2026) Role of Traps in Gate Leakage Current in p-gate GaN HEMTs Through TCAD Simulations. In: 56th Annual Meeting of the Italian Electronics Society (SIE), Napoli (Ita), 25-27 June 2025, pp. 43-50. ISSN 1876-1100. ISBN: 9783032173041 Contributo in Atti di Convegno (Proceeding)