Nonequilibrium Green's function description of carrier transport in nanostructured materials


This activity contributes to the development of a multiscale/multiphysics model of optoelectronic devices. It combines a non-equilibrium Green's function (NEGF) tool that provides a rigorous microscopic description of modern nanostructured materials, a drift-diffusion code to describe three-dimensional carrier transport, a full-wave electromagnetic solver based on coupled-mode theory, and a thermal model to describe heating effects. Based on a quantum field theoretical approach to non-equilibrium statistical mechanics, the NEGF method is a powerful tool to study carrier transport properties of nanostructures beyond the semi-classical limit. The NEGF code describes carrier transport and optical processes on equal footing with fully nonlocal self-energies derived in the self-consistent Born approximation. The drift-diffusion code is complemented with quantum corrections determined from NEGF simulations. Devices under study include VCSELs, visible and UV LEDs, type-II superlattice photodetectors, solar cells.

ERC sectors 

  • PE7_3 Simulation engineering and modelling
  • PE7_5 (Micro- and nano-) electronic, optoelectronic and photonic components
  • PE7_6 Communication systems, wireless technology, high-frequency technology


  • Green's function methods
  • Semiconductor device modeling
  • NEGF
  • Carrier transport in nanostructures