Description
The research is focused on the physics-based simulation and modeling of electron devices for microwave/RF applications in the large-signal nonlinear regime through the Harmonic Balance algorithm. The activity involves the development of numerical codes for the analysis and optimization of microwave devices in advanced semiconductor technologies, including GaN HEMTs and Si nanotransistors. Dispersive effects due to thermal and trap dynamics (GaN and Si devices) are analyzed at the physical level and linked to microwave circuit performance for device optimization. Advanced concepts of nonlinear device models are investigated, including X-parameters, black-box models and neural network models, allowing for the direct link of physical simulations and circuit analysis.