Lun
08
Mag
Altri Eventi
Silicon carbide, an emerging material platform for photonic integrated circuits (PIC) and quantum photonic integrated circuits (QPIC)
On Monday, 8 May 2023, the meeting entitled "Silicon carbide, an emerging material platform for photonic integrated circuits (PIC) and quantum photonic integrated circuits (QPIC)", part of the INRiM seminar series, will be held online.
Abstract
Silicon carbide (SiC), as wide bandgap semiconductor, possesses unique physical properties. These unique properties are being explored to provide radical solutions comparing to its counterparts such as silicon and gallium arsenide, representatives for the first and second generation semiconductors respectively.
For example, SiC is playing a very important role in power electronics due to its high electron breakdown field, high electron saturation velocity, wide bandgap, high melting point and high thermal conductivity. SiC based power electronic devices consume less energy and have better performances.
Additionally, SiC also has super optical properties such as both high second-order and third-order nonlinearity. Leveraging the mature material growth and processing technology during the development of power electronics, SiC is emerging as a promising material platform for PIC. Different polytypes ( 6H, 4H, 3C and amorphous) SiC waveguides have been demonstrated with loss as low as several dB/cm. Correspondingly, optical cavities (photonic crystal, mirroring resonator, microdisk) have achieved quality factor as high as 1 million. The tight optical confinement and high quality factor optical cavities enable the nonlinear study of SiC by taking use of conventional lab equipment. For example, the four-wave mixing experiment was demonstrated with input power requirement at dozens of mW level. These are fundamental and crucial for frequency conversion, optical frequency comb generation etc.
Furthermore, color centers in bulk SiC have been extensively investigated and show advantages over its peers (color centers in diamond and III-V quantum dots) over the following aspects.
Some of the color centers in SiC emit at the telecommunication wavelengths, the low transmission loss window of optical fibers, making it an ideal source for quantum communication using the existing fiber network. Some color centers in SiC have long spin coherent time, which is crucial for quantum memory, another crucial building block for quantum PIC.
Some color centers in SiC operate at room temperature, which is important for quantum technology leaving the lab and being implemented widely. As pioneer of applying silicon carbide in photonics, in this talk, I’ll present the state of the art of the SiC nanophotonics and color centers in bulk SiC. Prospectives of SiC PIC and QPIC will be foreseen and the challenges will be identified.
Speaker: Doctor Ou Haiyan - Technical University of Denmark – DTU.
Organised by Italian National Institute of Metrology Research.
Abstract
Silicon carbide (SiC), as wide bandgap semiconductor, possesses unique physical properties. These unique properties are being explored to provide radical solutions comparing to its counterparts such as silicon and gallium arsenide, representatives for the first and second generation semiconductors respectively.
For example, SiC is playing a very important role in power electronics due to its high electron breakdown field, high electron saturation velocity, wide bandgap, high melting point and high thermal conductivity. SiC based power electronic devices consume less energy and have better performances.
Additionally, SiC also has super optical properties such as both high second-order and third-order nonlinearity. Leveraging the mature material growth and processing technology during the development of power electronics, SiC is emerging as a promising material platform for PIC. Different polytypes ( 6H, 4H, 3C and amorphous) SiC waveguides have been demonstrated with loss as low as several dB/cm. Correspondingly, optical cavities (photonic crystal, mirroring resonator, microdisk) have achieved quality factor as high as 1 million. The tight optical confinement and high quality factor optical cavities enable the nonlinear study of SiC by taking use of conventional lab equipment. For example, the four-wave mixing experiment was demonstrated with input power requirement at dozens of mW level. These are fundamental and crucial for frequency conversion, optical frequency comb generation etc.
Furthermore, color centers in bulk SiC have been extensively investigated and show advantages over its peers (color centers in diamond and III-V quantum dots) over the following aspects.
Some of the color centers in SiC emit at the telecommunication wavelengths, the low transmission loss window of optical fibers, making it an ideal source for quantum communication using the existing fiber network. Some color centers in SiC have long spin coherent time, which is crucial for quantum memory, another crucial building block for quantum PIC.
Some color centers in SiC operate at room temperature, which is important for quantum technology leaving the lab and being implemented widely. As pioneer of applying silicon carbide in photonics, in this talk, I’ll present the state of the art of the SiC nanophotonics and color centers in bulk SiC. Prospectives of SiC PIC and QPIC will be foreseen and the challenges will be identified.
Speaker: Doctor Ou Haiyan - Technical University of Denmark – DTU.
Organised by Italian National Institute of Metrology Research.
8 May 2023 at 2,00 pm ONLINE
On Google Meet platform