Marta Musso

Foto di Marta Musso

Dottoranda in Ingegneria Elettrica, Elettronica E Delle Comunicazioni , 40o ciclo (2024-2027)
Dipartimento di Elettronica e Telecomunicazioni (DET)

Profilo

Dottorato di ricerca

Argomento di ricerca

Electrical quantum metrology, quantum Hall effect devices, impedance and low current metrology

Tutori

Interessi di ricerca

Analog, Power and Mixed-Signal Circuits and Embedded Systems
Electronic devices: modeling and characterization
Micro- and nanotechnologies, devices, systems and applications

Biografia

Marta Musso was born in Turin in 2000. She graduated with a bachelor's degree in Electronic Engineering in 2022 and a master's degree in Electronic Engineering - Electronic Micro and Nanosystems in 2024 from Politecnico di Torino. She worked for her master's thesis at the National Institute of Standards and Technology (NIST), Gaithersburg (U.S.), where she contributed in the development of quantum high resistance standards through the use of T-configuration arrays of quantum Hall effect devices. She started her PhD in Electrical, Electronic and Communications Engineering in 2024, also at Politecnico di Torino.
Her research interests are in electrical quantum metrology, and specifically on the use of quantum Hall effect devices in impedance and low current metrology.
Her research focuses on the development of a quantum transimpedance amplifier as a metrological tool for the amplification and measurement of small currents. The quantum transresistance standard is an array of quantum Hall effect elements that exhibit a quantized resistance value; its use allows the gain value of the transimpedance amplifier to be traceable to the International System of Units.

Premi e riconoscimenti

  • Best Poster Award at the International School of Physics "Enrico Fermi" - Course 217 (2025)

Pubblicazioni

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