• Variability analysis of electron Devices
• Microwave circuit design
• Modelling and Simulation of Electron Devices

ERC sectors

SDG

• Effective member - EUMA, Regno Unito (2015-)
• Effective member - MECSA, Italia (1997-)
• Effective member - IEEE, Stati Uniti (1997-)

• ELECTRONICS LETTERS (2018-), Other editorial activities
• INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS (2018-), Other editorial activities
• IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (2018-), Other editorial activities
• IEEE TRANSACTIONS ON ELECTRON DEVICES (2010-), Other editorial activities
• IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2010-), Other editorial activities
• (1999), Other editorial activities

• EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (13/2/2022-18/2/2022), Certified auditor

• SIR Scientific Independence of young Researchers. 2014
  MIUR
• FIRB. 2010
  MIUR

• DISPOSITIVI ELETTRONICI, 2011/2012 (28. ciclo)
  Politecnico di TORINO

• Collegio di Ingegneria Elettronica, delle Telecomunicazioni e Fisica (ETF). Componente
• Collegio di Ingegneria Informatica, del Cinema e Meccatronica. Componente

PhD

• Quantum modelling of nanodevices: the density gradient approach. A.A. 2021/22, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Main teacher
• Quantum modelling of nanodevices: the density gradient approach. A.A. 2022/23, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Main teacher
• Advanced devices for high frequency applications. A.A. 2019/20, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Teaching assistant
• Advanced devices for high frequency applications. A.A. 2021/22, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Teaching assistant
• Advanced devices for high frequency applications. A.A. 2022/23, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Teaching assistant

Master of Science

• High speed electron devices. A.A. 2017/18, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• High speed electron devices. A.A. 2018/19, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• High speed electron devices. A.A. 2019/20, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• High speed electron devices. A.A. 2020/21, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• High speed electron devices. A.A. 2021/22, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• High speed electron devices. A.A. 2022/23, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Microelectronic devices. A.A. 2018/19, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Titolare del corso
• Microelectronic devices. A.A. 2017/18, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• Radio frequency integrated circuits. A.A. 2017/18, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Micro and Nanoelectronic Devices. A.A. 2019/20, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• Micro and Nanoelectronic Devices. A.A. 2020/21, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• Micro and Nanoelectronic Devices. A.A. 2021/22, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• Micro and Nanoelectronic Devices. A.A. 2022/23, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso

Bachelor of Science

• Sistemi elettronici, tecnologie e misure. A.A. 2018/19, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2019/20, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2020/21, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2021/22, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2022/23, INGEGNERIA INFORMATICA. Titolare del corso

• Noise device simulation
• Efficient sensitivity simulation of semiconductor devices
• Complex system approach to microwave circuit stability assessment

• Microwave and Optoelectronics Group (MOG)

Projects funded by competitive calls

• Empowering GaN-on-SiC and GaN-on-Si technologies for the next challenging millimeter-wave applications, (2020-2024) - Responsabile Scientifico
  Nationally funded research - PRIN
• Simulazione fisica di rumore ciclostazionario e intermodulazione nei dispositivi elettronici per sistemi radio integrati operanti in regime di ampio segnale quasi-periodico, (2007-2009) - Responsabile Scientifico
  Nationally funded research - PRIN

• Eva Catoggio. Programme in Ingegneria Elettrica, Elettronica E Delle Comunicazioni (cycle 35, 2019-in progress)
  Research subject: Advanced modeling of nanoscale devices for analog applications
  
  Electronic devices: modeling and characterization
  Micro- and nanotechnologies, devices, systems and applications
  Modeling, simulation and CAD

• Donati Guerrieri, S.; Ramella, C.; Catoggio, E.; Bonani, F. (2022)
  TCAD-based Dynamic Thermal X-parameters for PA Self-Heating Analysis. In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC), Milano (Italy), 26-27 September 2022, pp. 13-16. ISBN: 978-2-87487-070-5
  Contributo in Atti di Convegno (Proceeding)
• Donati Guerrieri, Simona; Ramella, Chiara; Catoggio, Eva; Bonani, Fabrizio (2022)
  Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design. In: ELECTRONICS, vol. 11. ISSN 2079-9292
  Contributo su Rivista
• Donati Guerrieri, S.; Catoggio, E.; Bonani, F. (2022)
  TCAD simulation of microwave circuits: The Doherty amplifier. In: SOLID-STATE ELECTRONICS, vol. 197. ISSN 0038-1101
  Contributo su Rivista
• Catoggio, E.; Donati Guerrieri, S.; Bonani, F.; Ghione, G. (2022)
  Efficient TCAD Temperature-dependent Large-Signal Simulation of a FinFET Power Amplifier. In: 2021 16th European Microwave Integrated Circuits Conference (EuMIC), London, UK, 3-4 April 2022, pp. 189-192. ISBN: 978-2-87487-064-4
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, E.; Guerrieri, S. Donati; Ramella, C.; Bonani, F. (2022)
  Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations. In: 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Cardiff (UK), 7-8 April 2022, pp. 1-3. ISBN: 978-1-6654-7845-8
  Contributo in Atti di Convegno (Proceeding)