Simona Donati Guerrieri

ERC sectors

SDG

• Effective member - EUMA, Regno Unito (2015-)
• Effective member - MECSA, Italia (1997-)
• Effective member - IEEE, Stati Uniti (1997-)

• INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS (2018-), Other editorial activities
• IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (2018-), Other editorial activities
• ELECTRONICS LETTERS (2018-), Other editorial activities
• IEEE TRANSACTIONS ON ELECTRON DEVICES (2010-), Other editorial activities
• IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2010-), Other editorial activities

• EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (13/2/2022-18/2/2022), Certified auditor

• SIR Scientific Independence of young Researchers. 2014
  MIUR
• FIRB. 2010
  MIUR

• DISPOSITIVI ELETTRONICI, 2011/2012 (28. ciclo)
  Politecnico di TORINO

• Collegio di Ingegneria Elettronica, delle Telecomunicazioni e Fisica. Componente
• Collegio di Ingegneria Informatica, del Cinema e Meccatronica. Componente

PhD

• Advanced devices for high frequency applications. A.A. 2023/24, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Teaching assistant
• Advanced devices for high frequency applications. A.A. 2022/23, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Teaching assistant
• Quantum modelling of nanodevices: the density gradient approach. A.A. 2021/22, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Main teacher
• Advanced devices for high frequency applications. A.A. 2021/22, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Teaching assistant
• Advanced devices for high frequency applications. A.A. 2019/20, INGEGNERIA ELETTRICA, ELETTRONICA E DELLE COMUNICAZIONI. Teaching assistant

Master of Science

• High speed electron devices. A.A. 2024/25, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Quantum Condensed Matter Physics/Quantum Devices (modulo di Quantum Devices). A.A. 2024/25, QUANTUM ENGINEERING. Titolare del corso
• Micro and Nanoelectronic Devices. A.A. 2024/25, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• Quantum Condensed Matter Physics/Quantum Devices (modulo di Quantum Devices). A.A. 2023/24, QUANTUM ENGINEERING. Titolare del corso
• High speed electron devices. A.A. 2023/24, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Micro and Nanoelectronic Devices. A.A. 2023/24, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• High speed electron devices. A.A. 2022/23, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Micro and Nanoelectronic Devices. A.A. 2022/23, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• High speed electron devices. A.A. 2021/22, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Micro and Nanoelectronic Devices. A.A. 2021/22, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• High speed electron devices. A.A. 2020/21, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Micro and Nanoelectronic Devices. A.A. 2020/21, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• High speed electron devices. A.A. 2019/20, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso
• Micro and Nanoelectronic Devices. A.A. 2019/20, NANOTECHNOLOGIES FOR ICTs (NANOTECNOLOGIE PER LE ICT). Titolare del corso
• Microelectronic devices. A.A. 2018/19, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Titolare del corso
• High speed electron devices. A.A. 2018/19, INGEGNERIA ELETTRONICA (ELECTRONIC ENGINEERING). Collaboratore del corso

Bachelor of Science

• Sistemi elettronici, tecnologie e misure. A.A. 2024/25, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2023/24, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2022/23, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2021/22, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2020/21, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2019/20, INGEGNERIA INFORMATICA. Titolare del corso
• Sistemi elettronici, tecnologie e misure. A.A. 2018/19, INGEGNERIA INFORMATICA. Titolare del corso

• Complex system approach to microwave circuit stability assessment (DET)
• Efficient sensitivity simulation of semiconductor devices (DET)
• Noise device simulation (DET)

• Microwave and Optoelectronics Group (MOG) (DET)

Projects funded by competitive calls

• GANAPP - Empowering GaN-on-SiC and GaN-on-Si technologies for the next challenging millimeter-wave applications, (2020-2024) - Responsabile Scientifico
  Nationally funded research - PRIN
• Simulazione fisica di rumore ciclostazionario e intermodulazione nei dispositivi elettronici per sistemi radio integrati operanti in regime di ampio segnale quasi-periodico, (2007-2009) - Responsabile Scientifico
  Nationally funded research - PRIN

• Eva Catoggio. Programme in Ingegneria Elettrica, Elettronica E Delle Comunicazioni (35^th cycle, 2019-2023)
  Thesis: Advanced modeling of nanoscale devices for analog applications
  
  Electronic devices: modeling and characterization
  Micro- and nanotechnologies, devices, systems and applications
  Modeling, simulation and CAD
  Electronic devices: modeling and characterization
  Micro- and nanotechnologies, devices, systems and applications
  Modeling, simulation and CAD

• Catoggio, E.; Donati Guerrieri, S.; Bonani, F. (2024)
  Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs. In: 54th Annual Meeting of the Italian Electronics Society (SIE), Noto, Italy, 6-8 September 2023, pp. 102-109. ISSN 1876-1100. ISBN: 978-3-031-48710-1
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, Eva; Guerrieri, Simona Donati; Bonani, Fabrizio (2023)
  TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions. In: 2023 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), Aveiro, Portugal, 8-11 November 2023, pp. 1-4. ISBN: 979-8-3503-2242-2
  Contributo in Atti di Convegno (Proceeding)
• Kouhalvandi, Lida; Donati Guerrieri, Simona (2023)
  Modeling of HEMT Devices Through Neural Networks: Headway for Future Remedies. In: 10th International Conference on Electrical and Electronics Engineering (ICEEE), Istanbul, Turkiye, 08-10 May 2023, pp. 261-267. ISBN: 979-8-3503-0429-9
  Contributo in Atti di Convegno (Proceeding)
• Catoggio, Eva; Guerrieri, Simona Donati; Bonani, Fabrizio (2023)
  GaN HEMT trap-induced variability through concurrent noise and AC TCAD modelling. In: 2023 International Conference on Noise and Fluctuations (ICNF), Grenoble (France), 17-20 October 2023, pp. 1-4. ISBN: 979-8-3503-3011-3
  Contributo in Atti di Convegno (Proceeding)
• Ramella, C.; Donati Guerrieri, S.; Pirola, M. (2023)
  TCAD-based Pseudo-Common-Gate X-PAR Model for GaAs Stacked Power Amplifier Design. In: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023, Aveiro (Portugal), 08-11 November 2023, pp. 1-4. ISSN 2689-548X. ISBN: 979-8-3503-2242-2
  Contributo in Atti di Convegno (Proceeding)