De Ruvo, Edoardo; Guerrieri, Simona Donati; Bonani, Fabrizio; Cornigli, Davide; Larcher, ... (2026) TCAD Simulations of Degradation Mechanism in p-GaN Gate HEMTs under Gate Stress. In: 2026 IEEE International Reliability Physics Symposium (IRPS), Tucson (USA), 22-26 March 2026, pp. 1-6. ISBN: 979-8-3315-8971-4 Contributo in Atti di Convegno (Proceeding)
De Ruvo, Edoardo; Donati Guerrieri, Simona; Bonani, Fabrizio (2026) Role of Traps in Gate Leakage Current in p-gate GaN HEMTs Through TCAD Simulations. In: 56th Annual Meeting of the Italian Electronics Society (SIE), Napoli (Ita), 25-27 June 2025, pp. 43-50. ISSN 1876-1100. ISBN: 9783032173041 Contributo in Atti di Convegno (Proceeding)