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Sviluppo di MESFET Field Plate su SiC per applicazioni RF/switching e progetto termico e caratterizzazione di potenza di dispositivi field-plate a semiconduttore composto
Duration:
30/01/2006 - 30/01/2008
Principal investigator(s):
Project type:
Nationally funded research - PRIN
Abstract
Development of field-plate (FP) SiC-based MESFETs for RF/switching applications and thermal design and RF characterization of compound semiconductor FP Schottky-barrier FETs and HFETs